Electronic properties of a heavily-doped n-type GaAsGa1−xAlxAs superlattice
- 31 August 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 98 (1-3), 101-107
- https://doi.org/10.1016/0039-6028(80)90479-3
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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