Junction edge region thermally stimulated capacitance (TSCAP) of n -Si doped with phosphorus and bismuth

Abstract

The high‐temperature (T>77°K) thermally stimulated capacitance (TSCAP) from the ionization of impurity centers located in the edge region of a semiconductor (Si) junction doped with two shallow level impurities (P and Bi) where one is the ``deep'' level trap (Bi) is reported for the first time. The theoretically predicted reverse bias voltage dependence of the size of the TSCAP is also verified experimentally.