Positron lifetimes in GaAs
- 1 April 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (4), 2962-2964
- https://doi.org/10.1063/1.326174
Abstract
The suitability of the positron‐lifetime technique to the study of native vacancies in GaAs is demonstrated. Significant variations in positron lifetime among a variety of as‐grown GaAs single crystals were observed. The longest positron lifetime was found in undoped samples. Annealing in vacuum at 300–500 °C reduced the long‐lifetime component. The results present strong evidence for the existence of Ga vacancies in the as‐grown material.Keywords
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