Junction Current Drift Effect of the Cu/Porous Si Device Prepared by Electrodeposition
- 1 February 1997
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 14 (2), 124-127
- https://doi.org/10.1088/0256-307x/14/2/013
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Current-voltage characteristics of porous-silicon layersPhysical Review B, 1995
- Spectroscopic investigation of electroluminescent porous siliconJournal of Applied Physics, 1994
- Light-emitting porous silicon diode with an increased electroluminescence quantum efficiencyApplied Physics Letters, 1993
- Current injection mechanism for porous-silicon transparent surface light-emitting diodesApplied Physics Letters, 1992
- Visible electroluminescence from porous silicon np heterojunction diodesApplied Physics Letters, 1992
- Visible electroluminescence from porous siliconApplied Physics Letters, 1992
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Porosity and Pore Size Distributions of Porous Silicon LayersJournal of the Electrochemical Society, 1987
- Electrolytic Shaping of Germanium and SiliconBell System Technical Journal, 1956