Microcrystalline formation in sputtered a-Si: H films
- 28 February 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 45 (7), 577-580
- https://doi.org/10.1016/0038-1098(83)90430-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Morphological fluctuation and electrical properties of sputtered hydrogenated siliconApplied Physics Letters, 1982
- Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees CJournal of Physics C: Solid State Physics, 1981
- Small-Angle-Scattering Evidence of Voids in Hydrogenated Amorphous SiliconPhysical Review Letters, 1979
- Voids in amorphous semiconductorsJournal of Non-Crystalline Solids, 1974