ELECTRO-OPTIC CHARACTERISTICS OF CdTe AT 3.39 AND 10.6μ

Abstract
The physical characteristics of high resistivity CdTe which are relevant to its use for electro‐optic modulation have been investigated at 3.39 and 10.6 μ. The unclamped electro‐optic characteristic n0 3r41 of CdTe was found to be 12 × 10−11 m/V and the absorption coefficient is 0.006 cm−1. Our measurements indicate that CdTe will be a very important material for electro‐optic modulation in the infrared.

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