Electron Paramagnetic Resonance in Irradiated Oxygen-Doped Germanium
- 1 March 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (3), 793-795
- https://doi.org/10.1063/1.1714220
Abstract
Electron paramagnetic resonance studies have been performed in oxygen‐doped germanium. Room‐temperature irradiation with 2‐MeV electrons produces a paramagnetic center of S = ½ whose g tensor has (011), (01̄1), (100) principal axes. The g shifts are consistent with this being the germanium A center, i.e., an oxygen‐vacancy complex. Infrared absorption bands at 766, 807, and 847 cm−1 may be associated with this defect.Keywords
This publication has 8 references indexed in Scilit:
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-CenterPhysical Review B, 1964
- OXYGEN-DEFECT COMPLEXES IN GERMANIUMApplied Physics Letters, 1963
- The ionization behavior of donors formed from oxygen in germaniumJournal of Physics and Chemistry of Solids, 1961
- Defects in Irradiated Silicon. II. Infrared Absorption of the Si-CenterPhysical Review B, 1961
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961
- Solubility of Oxygen in GermaniumJournal of Applied Physics, 1961
- Donor equilibria in the Germanium-oxygen systemJournal of Physics and Chemistry of Solids, 1961
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956