Effect of a tilted magnetic field on the anomalousH=0conducting phase in high-mobility Si MOSFET’s

Abstract

The suppression by a magnetic field of the anomalous $H=0\mathrm{}$ conducting phase in high-mobility silicon metal-oxide-semiconductor field-effect transistors is independent of the angle between the field and the plane of the two-dimensional electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered $\mathrm{GaAs}/{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ heterostructures: the system is insulating in zero (perpendicular) field, and exhibits reentrant insulator–quantum-Hall-effect–insulator transitions as a function of perpendicular field. The results demonstrate that the suppression of the low-$T$ phase is related only to the electrons’ spin.