High-resistivity GaAs grown by high-temperature molecular-beam epitaxy
- 15 August 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (4), 1320-1322
- https://doi.org/10.1063/1.351740
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- 1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As)IEEE Electron Device Letters, 1991
- Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1990
- Thermoelectric effect spectroscopy of deep levels—application to semi-insulating GaAsApplied Physics Letters, 1990
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988