Quantum confinement effect in self-assembled, nanometer silicon dots

Abstract

The first subband energy at the valence band of self-assembled silicon quantum dots grown by low-pressure chemical vapor deposition on ultrathin ${\mathrm{SiO}}_{\mathrm{2}}\mathrm{/Si}$ substrates has been measured as an energy shift at the top of the valence band density of states by using high-resolution x-ray photoelectron spectroscopy. The systematic shift of the valence band maximum towards higher binding energy with decreasing the dot size is shown to be consistent with theoretical prediction. The charging effects of the silicon dots and the ${\mathrm{SiO}}_{\mathrm{2}}$ layer by photoelectron emission during the measurements have been taken into account in determining the valence-band-edge energy.