High-Brightness and Low-Voltage Light-Emitting Devices Based on Trischelated Ruthenium(II) and Tris(2,2‘-bipyridine)osmium(II) Emitter Layers and Low Melting Point Alloy Cathode Contacts
- 13 July 2002
- journal article
- research article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 14 (8), 3465-3470
- https://doi.org/10.1021/cm020117h
Abstract
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