Gain spectroscopy on InGaN/GaN quantum well diodes

Abstract

We have investigated spectroscopically the emergence of gain in InGaN/GaN quantum well diodes under high current injection $\mathrm{(>}{\mathrm{kA/cm}}^{\mathrm{2}}\mathrm{).}$ The spectral characteristics suggest that the electronic states responsible for blue laser action in this material are strongly influenced by the presence of microscopic crystalline disorder.