Cadmium telluride films by metalorganic chemical vapor depositiona)

Abstract

Polycrystalline films of cadmium telluride (CdTe) have been deposited on glass and SnO₂:F/glass substrates at 350–400 °C by the reaction of dimethylcadmium (DMCd) and diisopropyltellurium (DIPTe) in a hydrogen atmosphere. The DMCd/DIPTe molar ratio in the reaction mixture is an important factor affecting the deposition rate, conductivity type, and photoluminescence of deposited films. Photoluminescence measurements indicate that CdTe films deposited at 400 °C are of better quality than films deposited at 350 °C. The films deposited at 400 °C are p‐type at DMCd/DIPTe molar ratios of 0.51 or less and are n‐type at higher ratios. The structural, optical, and electrical properties of CdTe films have been characterized.