Conductivity oscillation due to quantum interference in a proposed wash-board transistor
- 30 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (22), 1807-1808
- https://doi.org/10.1063/1.98529
Abstract
Conductivity oscillation due to quantum interference is theoretically studied in a proposed wash-board transistor. The transistor has a two-dimensional electron gas modulated by a weak periodic potential, and its gate voltage can change the Fermi energy. The periodic potential is approximated by a square well considering the screening effect. Conductivity oscillation is found to originate in the electron velocity modulation caused by a quantum interference effect, not in the density of states modulation. This result is confirmed by comparison with experimental results, which give some clues to the real potential formed on a two-dimensional interface.Keywords
This publication has 4 references indexed in Scilit:
- The two-dimensional electron gas subject to a weak periodic potentialJournal of Physics C: Solid State Physics, 1985
- Surface superlattice formation in silicon inversion layers using 0.2-µm period grating-gate electrodesIEEE Electron Device Letters, 1985
- On the realizability of artificial superlattices in inversion layer systemsSurface Science, 1982
- Minigap and Transport in a Two-Dimensional Electron SystemJournal of the Physics Society Japan, 1979