Investigation of initial growth process for GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-assisted MBE
- 11 December 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 237-239, 1104-1109
- https://doi.org/10.1016/s0022-0248(01)02099-1
Abstract
No abstract availableKeywords
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