Quantifying the effects of uneven etching during the SIMS analysis of periodic doping structures grown by silicon MBE
- 1 January 1988
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 11 (1-2), 80-87
- https://doi.org/10.1002/sia.740110110
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Loss of depth resolution with depth in secondary ion mass spectrometry (SIMS) due to variations in ion dose density across the rastered areaVacuum, 1986
- Rapid automatic compensation for charging effects during the SIMS depth profiling of semiconductorsVacuum, 1986
- Depth Resolution in Profiling of Thin GaAs-GaAlAs LayersPublished by Springer Nature ,1986
- Software and Interfaces for the Automatic Operation of a Quadrupole SIMS InstrumentPublished by Springer Nature ,1986
- Deconvolution of atomic mixing effects from SIMS depth profilesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Experimental study of electrode materials for use in a cold-cathode oxygen dischargeInternational Journal of Mass Spectrometry and Ion Physics, 1983
- The depth dependence of the depth resolution in sputter profilingSurface and Interface Analysis, 1982