Transmission properties of rib waveguides formed by anodization of epitaxial GaAs on Alx Ga1−x As layers

Abstract

Two‐dimensional rib waveguides were formed by anodization etching of single‐heterostructure GaAs–Al_x Ga_1−x As slab waveguides. Low transmission losses (<2 cm⁻¹) were observed for GaAs layer thicknesses $\text{≳ 0.8 μ}\mathrm{m}$ . Efficient preferential excitation of individual discrete modes and good mode stability were obtained in rib guides 0.8 μm thick, with 0.1‐μm‐high steps and width ≤10 μm.