Band gap of the Ge(111)2×1 and Si(111)2×1 surfaces by scanning tunneling spectroscopy
- 15 December 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (24), 13791-13794
- https://doi.org/10.1103/physrevb.44.13791
Abstract
The scanning tunneling microscope is used to measure the spectrum of states for the Ge(111)2×1 and Si(111)2×1 surfaces. Detailed spectra, revealing the entire empty and filled state bands for both surfaces are obtained. Band gaps of 0.65±0.09 eV and 0.50±0.05 eV are found for the Ge and Si surfaces, respectively. The results are compared with values for the band gaps obtained from recent quasiparticle calculations.Keywords
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