High power and high efficiency green light emitting diode on free‐standing semipolar (11$ \bar 2 $2) bulk GaN substrate
- 15 June 2007
- journal article
- research article
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 1 (4), 162-164
- https://doi.org/10.1002/pssr.200701098
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Nitride emitters go nonpolarPhysica Status Solidi (RRL) – Rapid Research Letters, 2007
- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (101̄1̄) Bulk GaN SubstratesJapanese Journal of Applied Physics, 2007
- High Power and High External Efficiency m-Plane InGaN Light Emitting DiodesJapanese Journal of Applied Physics, 2007
- First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar PlanesJapanese Journal of Applied Physics, 2006
- Strain-induced polarization in wurtzite III-nitride semipolar layersJournal of Applied Physics, 2006
- Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk SubstratesJapanese Journal of Applied Physics, 2006
- Characterization of Planar Semipolar Gallium Nitride Films on Sapphire SubstratesJapanese Journal of Applied Physics, 2006
- Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed OperationJapanese Journal of Applied Physics, 2006
- Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diodeApplied Physics Letters, 2005
- Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structuresApplied Physics Letters, 1999