Regrowth of GaAs quantum wells on GaAs liftoff films ‘van der Waals bonded’ to silicon substrates

Abstract

We report the first epitaxial regrowth on lifted-off large-area micron-thick single-crystal GaAs films bonded by surface tension (van der Waals) forces to a foreign substrate. GaAs quantum wells grown by MOCVD on a GaAs film which had been van der Waals bonded to an Si substrate showed linewidths and luminescence efficiencies comparable to those grown directly on GaAs substrates.