Assessment of persistent-photoconductivity centers in MBE grown Al x Ga1-x as using capacitance spectroscopy measurements
- 1 August 1982
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 28 (4), 223-227
- https://doi.org/10.1007/bf00618698
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Molecular Beam Epitaxy of III-V Compounds: Technology and Growth ProcessAnnual Review of Materials Science, 1981
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductorsApplied Physics A, 1977