Electric Field Effect on the Al-MgO-YBa2Cu3Oy Structure
- 1 January 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (1A), L86-88
- https://doi.org/10.1143/jjap.29.l86
Abstract
The electric field effect on YBa2Cu3O y was investigated at room temperature by using the Al-MgO-(001)YBa2Cu3O y metal-insulator-superconductor (MIS) structure. Special care was taken for preparation of a good interface: heteroepitaxial growth technology was employed for MgO-YBa2Cu3O y successive growth. A typical MIS capacitance-voltage (C-V) curve was obtained under the condition of the reduced carrier concentration, suggesting that the existing band diagram could be applicable to YBa2Cu3O y as well as to semiconductors.Keywords
This publication has 9 references indexed in Scilit:
- SiO2 and Si3N4 passivation layers on Y-Ba-Cu-O thin filmsJournal of Applied Physics, 1989
- Temperature dependence of the critical current in high-superconductorsPhysical Review B, 1989
- Temperature dependence of lower critical fields in Y-Ba-Cu-O crystalsPhysical Review B, 1989
- Optical anisotropy ofPhysical Review B, 1988
- Measurement of anisotropic resistivity and Hall constant for single-crystalPhysical Review Letters, 1987
- Spectroscopic evidence for strongly correlated electronic states in La-Sr-Cu and Y-Ba-Cu oxidesPhysical Review B, 1987
- The Anisotropic Upper Critical Field of Single Crystal YBa2Cu3OxJapanese Journal of Applied Physics, 1987
- Experimental considerations in the quest for a thin-film superconducting field-effect transistorIEEE Transactions on Magnetics, 1987
- Interfacial properties of Al2O3-InP metal-insulator-semiconductor structure prepared in excess organophosphorus atmosphereJournal of Applied Physics, 1984