Determination of the temperature dependence of the free carrier and interband absorption in silicon at 1.06μm
- 28 September 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (18), 3837-3842
- https://doi.org/10.1088/0022-3719/12/18/029
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Time-resolved reflectivity of ion-implanted silicon during laser annealingApplied Physics Letters, 1978
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- Laser-Induced Infrared Absorption in SiliconJournal of Applied Physics, 1970
- The temperature-dependence of the refractive index of siliconJournal of Physics and Chemistry of Solids, 1959
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958