Time-resolved Raman measurements of intersubband relaxation in GaAs quantum wells
- 9 October 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (15), 1637-1640
- https://doi.org/10.1103/physrevlett.63.1637
Abstract
We have measured the electron intersubband relaxation time due to the emission of longitudinal-optical (LO) phonons in GaAs-AlGaAs quantum wells using time-resolved anti-Stokes Raman scattering. When the energy separation of the subbands is greater than the LO phonon energy we find the lifetime of electrons in the n=2 level to be ≤1 ps which is in excellent agreement with theoretical calculations of two-dimensional electron-phonon interactions.Keywords
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