Transient enhanced diffusion in arsenic-implanted short time annealed silicon
- 1 January 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (1), 107-109
- https://doi.org/10.1063/1.94572
Abstract
An anomalous enhanced diffusion is observed when As-implanted Si samples are exposed to rapid heating (∼ seconds) from room temperature to temperatures exceeding 1000 °C. This diffusion can be characterized by a low activation energy of ∼1.8 eV and is active during a very short time (≲ 1 s) probably during the rapid heating up of the sample.Keywords
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