A new type of source generating misfit dislocations
- 1 September 1978
- journal article
- Published by Springer Nature in Applied Physics B Laser and Optics
- Vol. 17 (1), 85-87
- https://doi.org/10.1007/bf00885035
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- I n s i t u x-ray topography of epitaxial Ge layers during growthApplied Physics Letters, 1978
- COHERENT INTERFACES AND MISFIT DISLOCATIONSPublished by Elsevier ,1975
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969
- Accommodation of misfit across the interface between single-crystal films of various face-centred cubic metalsPhilosophical Magazine, 1966
- One-dimensional dislocations. II. Misfitting monolayers and oriented overgrowthProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949