(InAs)1(GaAs)1 Layered Crystal Grown on (100)InP by MOCVD
- 1 October 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (10A), L774
- https://doi.org/10.1143/jjap.24.l774
Abstract
The crystal growth process is investigated for a (InAs)1(GaAs)1 layered crystal (LC) grown on (100) oriented InP by metallorganic chemical vapor deposition (MOCVD). It is shown that substrate misorientation strongly affects the layered crystal properties. Macroscopic growth steps are observed when these LCs are grown on (100) vicinal oriented InP substrates (α=2^°). Furthermore, the superlattice orientation is in the (100) direction and does not reflect the original substrate surface. The results indicate that preferential layer nucleation of InAs/GaAs takes place along (100) singular surfaces.Keywords
This publication has 3 references indexed in Scilit:
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- (InAs)1(GaAs)1 Layered Crystal Grown by MOCVDJapanese Journal of Applied Physics, 1984
- Crystal growth kinetics in (GaAs)n−(AlAs)m superlattices deposited by molecular beam epitaxyJournal of Crystal Growth, 1978