Abstract
The solubility and diffusion coefficient of zinc in gallium phosphide have been determined over a temperature range of 700–1300°C. The maximum solubility of Zn in GaP is about 4×1020 atoms cm−3, and occurs at approximately 1200°C. The diffusion is similar to that of Zn in GaAs and can be represented by the equation: D=1.0 exp[−2.1/kT] . The mechanism of diffusion evidently involves interstitial Zn as well as Zn on substitutional sites.

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