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Characteristics of MOS devices in electron beam-recrystallized silicon on insulator
Home
Publications
Characteristics of MOS devices in electron beam-recrystallized silicon on insulator
Characteristics of MOS devices in electron beam-recrystallized silicon on insulator
YO
Y. Ohmura
Y. Ohmura
KS
K. Shibata
K. Shibata
TI
T. Inoue
T. Inoue
TY
T. Yoshii
T. Yoshii
YH
Y. Horiike
Y. Horiike
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1 January 1982
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
p.
429-432
https://doi.org/10.1109/iedm.1982.190316
Abstract
N-channel MOS devices have been fabricated in an electron beam-recrystallized silicon film on a Si3N4/SiO2/
Keywords
MOS DEVICES
ELECTRON BEAMS
SILICON ON INSULATOR TECHNOLOGY
ROUGH SURFACES
SURFACE ROUGHNESS
MOSFETS
OPTICAL FILMS
SEMICONDUCTOR FILMS
RING OSCILLATORS
ANNEALING
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Open Access
Cited by 2 articles