Characteristics of MOS devices in electron beam-recrystallized silicon on insulator

Publisher Website

1 January 1982

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 429-432
https://doi.org/10.1109/iedm.1982.190316

Abstract

N-channel MOS devices have been fabricated in an electron beam-recrystallized silicon film on a Si3N4/SiO2/

Keywords

Cited by 2 articles