Short-channel effect in fully depleted SOI MOSFETs

Publisher Website

1 January 1989

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 36 (2), 399-402
https://doi.org/10.1109/16.19942

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Analytical models of threshold voltage and breakdown voltage of short-channel MOSFETs derived from two-dimensional analysis
IEEE Journal of Solid-State Circuits, 1979
A simple theory to predict the threshold voltage of short-channel IGFET's
Solid-State Electronics, 1974

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