Band offsets for the silicon nitride/amorphous silicon interface: Implications for charge transport and trapping in silicon nitride
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 891-894
- https://doi.org/10.1016/0022-3093(87)90214-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electronic structure of silicon nitride and amorphous silicon/silicon nitride band offsets by electron spectroscopyJournal of Applied Physics, 1987
- Instability mechanism in hydrogenated amorphous silicon thin-film transistorsApplied Physics Letters, 1987
- Thermal-equilibrium processes in amorphous siliconPhysical Review B, 1987
- Metastable Defects in Amorphous-Silicon Thin-Film TransistorsPhysical Review Letters, 1986
- Electronic structure of hydrogenated and unhydrogenated amorphous: A photoemission studyPhysical Review B, 1984
- Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistorsApplied Physics Letters, 1983