In Situ IR Absorption Study of H Bonding in a-Si:H Thin Films
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Microstructural evolution of ultrathin amorphous silicon films by real-time spectroscopic ellipsometryPhysical Review Letters, 1990
- Real-time detection of higher hydrides on the growing surface of hydrogenated amorphous silicon by infrared reflection absorption spectroscopyApplied Physics Letters, 1990
- Real time i n s i t u observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopyApplied Physics Letters, 1990
- Infrared relfectance spectroscopy of very thin films of a-SiHJournal of Non-Crystalline Solids, 1989
- In Situ IR Spectroscopic Study of a-Si:H Films Growing under Photo-Chemical Vapor Deposition ConditionJapanese Journal of Applied Physics, 1988
- Vibrational Spectra of Hydrogen in Silicon and GermaniumPhysica Status Solidi (b), 1983