SBAR filter monolithically integrated with HBT amplifier
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 519-524 vol.1
- https://doi.org/10.1109/ultsym.1990.171419
Abstract
The authors describe the successful monolithic integration of bulk acoustic filters with gallium arsenide integrated circuits. Data are presented for a filter-amplifier chip with a center frequency of 1023 MHz, a 4 MHz bandwidth, and +14 dB gain. The size of the filter-amplifier chip is 1.6*3.2 mm. The monolithic filter is an SBAR (semiconductor bulk acoustic resonator) stacked crystal filter. The filter was fabricated with sputtered aluminum nitride piezoelectric films. The active circuit is a gallium arsenide HBT amplifier. The amplifier is a two-stage design and has biasing resistors and coupling capacitors on-chip. The integration process for the monolithic SBAR-HBT filter-amplifier is outlined.Keywords
This publication has 6 references indexed in Scilit:
- Stacked crystal filters implemented with thin filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Low Insertion Loss Filters Synthesized with Thin Film ResonatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Thin Film Resonator TechnologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Recent Advances in Monolithic Film Resonator TechnologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- UHF Composite Bulk Wave ResonatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- A Novel Frequency Selective Device: The Stacked-Crystal FilterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973