An 8-18 GHz Monolithic Two-Stage Low Noise Amplifier
- 1 January 1984
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 84, 49-51
- https://doi.org/10.1109/mcs.1984.1113601
Abstract
A wideband monolithic low noise amplifier which covers the frequency band from 8 to 18 GHz has been designed and fabricated. The amplifier has a noise figure less than 4.3 dB and an associated gain of 8.5 dB across the entire band. A revised version of the amplifier which has a design goal of sub-four dB noise figure and an associated gain of 12 dB has been processed. Measured data will be presented at the conference.Keywords
This publication has 2 references indexed in Scilit:
- Ultra low-noise performance of 0.15-micron gate GaAs MESFET's made by direct ion implantation for low-cost MMIC's applicationsIEEE Microwave and Guided Wave Letters, 1992
- Computer-Aided Synthesis of Lumped Lossy Matching Networks for Monolithic Microwave Integrated Circuits ( MMIC's)IEEE Transactions on Microwave Theory and Techniques, 1984