Nonvolatile resistive switching memory based on amorphous carbon

Abstract

Resistive memory effect has been found in carbon nanostructure-based devices by Standley et al. [Nano Lett. 8, 3345 (2008)]. Compared to nanostructures, hydrogenated amorphous carbon (a-C: H) has much more controllable preparation processes. Study on a-C: H-based memory is of great significance to applications of carbon-based electronic devices. We observed nonvolatile resistance memory behaviors in metal/a-C: H/Pt structures with device yield 90%, ON/OFF ratio > 100, and retention time > 10(5) s. Detailed analysis indicates that the resistive switching originates from the formation/rupture of metal filaments due to the diffusion of the top electrodes under a bias voltage. (C) 2010 American Institute of Physics. [doi:10.1063/1.340612