Range distribution of implanted ions in SiO2, Si3N4, and Al2O3

Abstract

Backscattering measurements with 2.0‐MeV He⁺ ions were used to determine the range distribution of Zn, Ga, As, Se, Cd, and Te implanted in SiO₂, Si₃N₄, and Al₂O₃ at energies between 150 and 300 keV. Values of the projected range were systematically greater than LSS predictions by factors of 1.2–1.5. In normalized LSS units, the projected range, ρ_p, as a function of energy, ε, consistently followed within experimental error the relation ρ_p=2.7ε, where an arithmetic average atomic number of 10 and arithmetic average atomic mass of 20 apply to all three target species.