Lattice-Matched Epitaxial Growth of Semiconductor Films onto Insulator (Mixed Fluoride)/Si Structures

Abstract

Epitaxial growth of Ca _x Sr_1-x F₂ films onto Si(111) substrates and the growth of Ge films onto the fluoride/Si structure have been investigated. It has been found from ion channeling and backscattering measurements that at temperatures higher than 600°C a mixed fluoride film with good crystalline quality can be gnown and that a Ge overlayer of good quality is obtained when the lattice matching condition is satisfied. It has also been found from X-ray diffraction analysis that the lattice constant of the mixed fluoride film on Si changes linearly with the composition ratio.