Resonant Raman scattering by LO phonons in the presence of a static magnetic field

Abstract

Resonant Raman scattering from LO phonons in the presence of a constant magnetic field is considered. We calculate the differential extinction coefficient, including effects of the electron-phonon interaction, for a doped semiconductor. It is shown that significant deviations from the Lorentzian line shape may appear due to hybridization of the phonon mode with the cyclotron modes, when for certain geometries, a harmonic of the cyclotron frequency is approximately equal to the LO-phonon frequency. An application is made for GaAs.