The Etching of Ti Adhesion Layers in H[sub 2]O[sub 2] Solutions

Abstract

The etching of Ti in HF-free H2O2H2O2 solutions was investigated. Kinetic experiments were performed to tailor the etch rate within a range that is technologically interesting for etching thin (≈5 nm) Ti adhesion layers. Electrochemical measurements were used to characterize the etching process; galvanic element formation between Ti and Au did not result in an enhanced etch rate for Ti. This implies that Ti adhesion layers for Au can be etched without severe underetching. © 2002 The Electrochemical Society. All rights reserved.