Comment on ‘‘Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy’’ [J. Appl. Phys. 57, 249 (1985)]
- 15 October 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (8), 2980-2981
- https://doi.org/10.1063/1.337772
Abstract
The proper elastic equations for an epitaxial bilayer system are presented, amending an earlier paper published by other authors in this journal. The stress profile normal to the surface and the radius of curvature are given as functions of the epitaxial mismatch.Keywords
This publication has 2 references indexed in Scilit:
- Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxyJournal of Applied Physics, 1985
- Calculated elastic constants for stress problems associated with semiconductor devicesJournal of Applied Physics, 1973