Infrared plasma reflection in p-type GaAs
- 1 April 1978
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (4), 699-700
- https://doi.org/10.1016/0038-1101(78)90340-4
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- On the Infrared-Plasma-Reflection in p-Type GaAsPhysica Status Solidi (b), 1973
- Precision verification of effective mass theory for shallow donors in GaAsSolid State Communications, 1971
- Use of plasma edge reflection measurements in the study of semiconductorsJournal of Physics C: Solid State Physics, 1968
- Comparison of classical approximations to free carrier absorption in semiconductorsSolid-State Electronics, 1967
- Infrared Reflectivity of Heavily Doped Low-Mobility Semiconductors. I. GaAsJournal of Applied Physics, 1966
- Coupling of Plasmons to Polar Phonons in Degenerate SemiconductorsPhysical Review B, 1965
- Measurement of the Conductivity Effective Mass in Semiconductors Using Infrared ReflectionPhysical Review B, 1964
- Statistics and Galvanomagnetic Effects in Germanium and Silicon with Warped Energy SurfacesPhysical Review B, 1955