A new, single‐slice MBE machine for industrial application is presented. The basic unit of the modular concept consists of a storage chamber, which accommodates 25 wafers of 150 mm diam and a growth chamber with up to four E‐beam evaporators' and six effusion cells. A technical description of the key components of the fully microprocessor‐controlled system is given. Preliminary results concerning the performance of the apparatus are reported. Crystal quality and electrical characteristics of nominally undoped, epitaxial Si layers grown in the new system are discussed.