Electronic Structure of Semiconducting Films upon Ordering, as Observed by Double-Beam Photoemission
- 12 December 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 39 (24), 1565-1568
- https://doi.org/10.1103/physrevlett.39.1565
Abstract
The evolution of the electronic structure of disordered Te and Ge films upon thermal annealing and/or laser irradiation has been traced with use of the newly developed double-beam photoemission technique. In particular, it is shown that, contrary to what occurs in Te films, the onset of short-range crystalline ordering appears abruptly and uniformily within the Ge films, but over a much too short range to avoid randomization before emission of the electrons.
Keywords
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