Deep sulfur-related centers in silicon

Abstract

The electronic properties of two dominant sulfur‐related deep donor levels in silicon have been investigated using capacitance and dark current transient techniques. One of the centers, the B center, has an enthalpy ΔH_n of 0.32 eV and an electron‐capture cross section σ^t_nB of 2×10⁻¹⁵ cm² at 100 K. σ^t_nB varies with temperature as T^−3.3. A plot of log e^t_nA vs 1/T for the other center, the A center, shows a ’’thermal activation energy’’ of 0.59 eV. σ^t_nA is estimated to be larger than 10⁻¹⁴ cm². The nature of the A and B centers is discussed.