Enhanced bolometric response of Tain the non-Ohmic regime
- 15 March 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (6), 3916-3919
- https://doi.org/10.1103/physrevb.27.3916
Abstract
We report on the infrared bolometric spectrum of orthorhombic Ta between 400 and 1550 at ∼ 100 K, well below the charge-density-wave transition (at 220 K). The bolometric signal is observed to increase dramatically when the voltage across the sample exceeds the threshold for non-Ohmic conductivity. The wavelength and temperature dependence of this unusual bolometric "switch-on" are reported.
Keywords
This publication has 13 references indexed in Scilit:
- Charge-density-wave dynamics in TaPhysical Review B, 1982
- High frequency conductivity in the charge density wave semiconductor TaS3Solid State Communications, 1981
- Charge-Density-Wave Transport in TaPhysical Review Letters, 1981
- Observation of narrow-band charge-density-wave noise in TaPhysical Review B, 1981
- Non-ohmic conductivity of TaS3 in the low-temperature semiconducting regimeSolid State Communications, 1980
- Pressure dependence of the metal-semiconductor transition in TaS3Solid State Communications, 1979
- Peierls transition in TaS3Solid State Communications, 1977
- The energy-band gaps in tetrathiafulvalene-tetracyanoquinodimethane measured by far-infrared photoconductivitySolid State Communications, 1977
- Bolometric measurement of the far-infrared absorption spectrum of single-crystal tetrathiafulvalene-tetracyanoquinodimethaneSolid State Communications, 1976
- The system niobium-sulfurJournal of the Less Common Metals, 1969