Use of trimethylantimony and trimethylarsenic for organometallic v.p.e. growth of GAAs1-ySby and Ga1-xInxAs

Abstract

The use of trimethylarsenic and trimethylantimony as group V sources for the organometallic v.p.e. growth of GaAs1-ySby (0 ≤ y ≤ 0.11) and Ga1-xInxAs(x ≈ 0.29) is reported. No room-temperature reaction is observed between triethylindium and trimethylarsenic and the growths are made at ambient pressure with no special reactor modifications.