Photoluminescence from stain-etched polycrystalline Si thin films
- 26 April 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (17), 2111-2113
- https://doi.org/10.1063/1.109468
Abstract
Visible room‐temperature photoluminescence (PL) has been observed from stain‐etched polycrystalline Si thin films. Poly‐Si thin films deposited on oxidized Si and quartz substrates became porous (PoSi) after stain‐etching in a 1:3:5 solution of HF:HNO3:H2O. Under UV excitation, the stain‐etched doped and undoped poly‐Si films produce uniform orange‐red (∼650 nm) luminescence very similar to that obtained from stain‐etched crystalline Si substrates. Stained amorphous thin films did not exhibit photoluminescence. Luminescent patterns with sub‐micrometer (∼0.6 μm) dimensions have been obtained for the first time from PoSi produced from poly‐Si films.Keywords
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