X-center formation by neutron irradiation of Ga-doped float-zone silicon
- 1 August 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (3), 254-256
- https://doi.org/10.1063/1.93491
Abstract
Neutron irradiation of gallium‐doped float‐zone grown silicon has been observed to cause the appearance of the gallium X center. Hall effect, infrared absorption, and photoconductivity (photothermal ionization) were used to reveal its presence. The X center was seen in irradiated samples but not in unirradiated ones under identical annealing conditions. The measured ionization energy of this center agrees well with previously reported data (0.057 eV).Keywords
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