Growth of Hydrogenated Amorphous Silicon Films by ArF Excimer Laser Photodissociation of Disilane
- 1 February 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (2A), L91
- https://doi.org/10.1143/jjap.23.l91
Abstract
Hydrogenated amorphous silicon films have been grown on glass substrates by photodissociation of disilane using a pulsed ArF excimer laser foe the first time. Electrical and optical properties of the films have been examined. It was found that the magnitude of the gap energy of laser CVD films is rather large as compared to that of films obtained by a conventional plasma CVD. Preliminary examinations to control the conductivity by impurity doping have also been performed.Keywords
This publication has 8 references indexed in Scilit:
- Hydrogenated amorphous silicon produced by laser induced chemical vapor deposition of silaneApplied Physics Letters, 1983
- Optical and electrical properties of amorphous silicon films prepared by photochemical vapor depositionApplied Physics Letters, 1983
- Silicon Thin-Film Formation by Direct Photochemical Decomposition of DisilaneJapanese Journal of Applied Physics, 1983
- Laser-induced vapor deposition of siliconApplied Physics Letters, 1979
- Silane purification via laser-induced chemistryApplied Physics Letters, 1978
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- The 3P1 Mercury-Photosensitized Decomposition of MonosilaneThe Journal of Physical Chemistry, 1964
- Effect of light on the ignition of monosilane-oxygen mixturesTransactions of the Faraday Society, 1936