Dynamic Strength of the Silicon−Carbon Bond Observed over Three Decades of Force-Loading Rates

Abstract

The mechanical strength of individual Si-C bonds was determined as a function of the applied force-loading rate by dynamic single-molecule force spectroscopy, using an atomic force microscope. The applied force-loading rates ranged from 0.5 to 267 nN/s, spanning 3 orders of magnitude. As predicted by Arrhenius kinetics models, a logarithmic increase of the bond rupture force with increasing force-loading rate was observed, with average rupture forces ranging from 1.1 nN for 0.5 nN/s to 1.8 nN for 267 nN/s. Three different theoretical models, all based on Arrhenius kinetics and analytic forms of the binding potential, were used to analyze the experimental data and to extract the parameters fmax and D(e) of the binding potential, together with the Arrhenius A-factor. All three models well reproduced the experimental data, including statistical scattering; nevertheless, the three free parameters allow so much flexibility that they cannot be extracted unambiguously from the experimental data. Successful fits with a Morse potential were achieved with fmax = 2.0-4.8 nN and D(e) = 76-87 kJ/mol, with the Arrhenius A-factor covering 2.45 x 10(-10)-3 x 10(-5) s(-1), respectively. The Morse potential parameters and A-factor taken from gas-phase density functional calculations, on the other hand, did not reproduce the experimental forces and force-loading rate dependence.